1/10 target specification september 2005 this is preliminary information on a new product foreseen to be developed. details are subject to change without notice . stp16nk60z - stb16nk60z-s stW16NK60Z n-channel 600v - 0.38 - 14 a to-220 /i2spak/to-247 zener - protecdet supermesh? mosfet table 1: general features typical r ds (on) = 0.38 extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatibility description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mos - fets including revolutionary mdmesh? products. applications high current, high speed switching ideal for off-line power supplies table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw stp16nk60z stb16nk60z-s stW16NK60Z 600 v 600 v 600 v < 0.42 < 0.42 < 0.42 14 a 14 a 14 a 190 w 190 w 190 w 1 2 3 1 2 3 1 2 3 to-220 i 2 spak to-247 sales type marking package packaging stp16nk60z p16nk60z to-220 tube stb16nk60z-s b16nk60z i 2 spak tube stW16NK60Z W16NK60Z to-247 tube rev. 1
stp16nk65z - stb16nk65z-s - stW16NK60Z 2/10 table 3: absolute maximum ratings ) pulse width limited by safe operating area (1) i sd 14 a, di/dt 200 a/s, v dd v (br)dss , t j t jmax. table 4: thermal data table 5: avalanche characteristics table 6: gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 14 a i d drain current (continuous) at t c = 100c 8.8 a i dm ( ) drain current (pulsed) 56 a p tot total dissipation at t c = 25c 190 w derating factor 1.51 w/c v esd(g-s) gate source esd (hbm-c= 100pf, r= 1.5k ) 6000 v to-220/ i2spak to-247 rthj-case thermal resistance junction-case max 0.66 rthj-amb thermal resistance junction-ambient max 62.5 50 t l maximum lead temperature for soldering purpose 300 symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 14 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 360 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v
3/10 stp16nk60z - stb16nk60z-s - stW16NK60Z electrical characteristics (t case =25c unless otherwise specified) table 7: on/off table 8: dynamic (*) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss table 9: source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 7 a 0.38 0.42 v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 7 a 12 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 2650 285 62 pf pf pf c oss eq. (*) equivalent output capacitance v gs = 0v, v ds = 0v to 480v 158 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 480 v, i d = 14 a r g = 4.7 v gs = 10 v (resistive load see, figure 3) 30 25 70 15 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480v, i d = 14 a, v gs = 10v 86 17 46 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 14 56 a a v sd (1) forward on voltage i sd = 14 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 14 a, di/dt = 100 a/s v dd = 100 v, t j = 25c (see test circuit, figure 5) 490 5.4 22 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 14 a, di/dt = 100 a/s v dd = 100 v, t j = 150c (see test circuit, figure 5) 585 7 24 ns c a i sd i sdm (2) source-drain current source-drain current (pulsed) 14 56 a a
stp16nk65z - stb16nk65z-s - stW16NK60Z 4/10 figure 3: unclamped inductive load test cir - cuit figure 4: switching times test circuit for re - sistive load figure 5: test circuit for inductive load switching and diode recovery times figure 6: unclamped inductive wafeform figure 7: gate charge test circuit
5/10 stp16nk60z - stb16nk60z-s - stW16NK60Z in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
stp16nk65z - stb16nk65z-s - stW16NK60Z 6/10 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
7/10 stp16nk60z - stb16nk60z-s - stW16NK60Z dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stp16nk65z - stb16nk65z-s - stW16NK60Z 8/10 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 10.00 10.40 0.394 0.409 g 4.88 5.28 0.192 0.208 l 16.7 17.5 0.657 0.689 l2 1.27 1.4 0.05 0.055 l3 13.82 14.42 0.544 0.568 i 2 spak mechanical data
9/10 stp16nk60z - stb16nk60z-s - stW16NK60Z table 10: revision history date revision description of changes 06-jul-2004 1 first release. 06-sep-2005 2 inserted ecopak indication
stp16nk65z - stb16nk65z-s - stW16NK60Z 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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